Impact of grain-dependent boron uptake on the electrochemical and electrical properties of polycrystalline boron doped diamond electrodes |
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Authors: | Wilson Neil R Clewes Sarah L Newton Mark E Unwin Patrick R Macpherson Julie V |
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Affiliation: | Department of Physics, University of Warwick, Coventry CV4 7AL, UK. |
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Abstract: | A combination of high-resolution electrical and electrochemical imaging techniques, in conjunction with cathodoluminescence (CL), is used to investigate the electrochemical behavior of oxygen-terminated highly doped polycrystalline boron doped diamond (BDD). The BDD has a dopant density approximately 5 x 10(20) atoms cm(-3), grain size ca. 5-40 microm, and thickness 500 microm. CL imaging demonstrates that boron uptake is nonuniform across the surface of BDD, and conducting atomic force microscopy (C-AFM) highlights how this impacts on the local conductivity. While C-AFM shows no evidence for enhanced grain boundary conductivity, two characteristic conductivity domains are found with resistances of ca. 100 kOmega and ca. 50 MOmega. With the use of scanning electrochemical microscopy (SECM), local heterogeneities are also observed in the electroactivity of the BDD surface, consistent with the two different types of conducting regions. Local currents of the magnitude expected for metal-like behavior are observed in some regions, suggesting degenerative doping of the grains (supported by CL studies). In other regions, slower electron transfer is apparent. However, even for the reduction of Ru(NH(3))(6)(3+), which occurs at potentials far negative of the flat-band potential for oxygen-terminated BDD, all areas of the surface show some electroactivity. This study highlights that the spatially heterogeneous conductivity and corresponding electroactivity of BDD are readily resolved using a combination of C-AFM, SECM, and CL. |
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