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Crystallization kinetics of binary arsenic selenium chalcogenides |
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| Authors: | Alharbi S R Aly K A Dahshan A Saddeek Y B |
| Institution: | 1.Physics Department, Faculty of Science, University of Jeddah, Jeddah, Saudi Arabia ;2.Physics Department, Faculty of Science and Arts, Khulais, University of Jeddah, Jeddah, Saudi Arabia ;3.Physics Department, Faculty of Science, Al-Azhar University, Assiut Branch, Assiut, Egypt ;4.The Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha, 61413, Saudi Arabia ;5.Department of Physics, Faculty of Science, Port Said University, Port Said, Egypt ; |
| Abstract: | Binary As–Se glasses with different amounts of As content have been prepared and scanned with different heating rates (3?≤?ψ?≤?48 K min?1) over temperatures ranging from 300 to 450 K. Both the glass transition temperature (Tgl) and the temperature peak of crystallization (Tpc) increase as a function of As and/or the ψ values. A good correlation between Tgl and Tpc has been investigated. The observed increase in Tgl and Tpc by increasing the ψ values or as a function of As is well discussed in accordance with Lasocka’s relationship and using the average coordination number Acn, the viscosity at glass transition μ(Tgl) and the overall mean bond energy E. The glass transition Egl and crystallization activation energies (Egl and Epc) were determined based on the changes in Tgl and Tpc values due to the heating rate (ψ). The increase in the values of Egl and Epc with increasing the As content is expected due to the increase in Tgl and Tpc values. The kinetic exponent n and the crystal dimensionality m have been determined. |
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