Relative time parameters of optogalvanic responses |
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Authors: | N. Yackerson |
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Affiliation: | (1) Department of Electrical and Computer Engineering, Ben-Gurion University of the Negev, Beer-Sheva, Israel |
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Abstract: | New optogalvanic response relative time features, such as signal growth and decay speeds, are suggested. These criteria can characterize signal time response parameters, as well as determine which particular type of gas internal quantum process is dominant during a given stage of response development. The general theoretical concepts reported here are compared with experimental results which are based on resonant optogalvanic effects in neon discharges and on non-resonant optogalvanic signals in neon and argon prebreakdown discharges. These new time characteristics are conceptually pleasing and permit study of the influence of individual factors such as bias and incident laser irradiation on overall gas response. |
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Keywords: | 32.00 34.00 42.80 |
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