| SiGe HBT大信号等效电路模型 |
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| 引用本文： | 胡辉勇,张鹤鸣,吕懿,戴显英,侯慧,区健锋,王伟,王喜嫒. SiGe HBT大信号等效电路模型[J]. 物理学报, 2006, 55(1): 403-408 |
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| 作者姓名： | 胡辉勇 张鹤鸣 吕懿 戴显英 侯慧 区健锋 王伟 王喜嫒 |
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| 作者单位： | 西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室，西安 710071 |
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| 基金项目： | 国家部委预研基金;国家重点实验室基金;西安电子科技大学校科研和教改项目 |
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| 摘 要： | 基于SiGe HBT(异质结双极晶体管)的物理模型，建立了描述SiGe HBT的大信号等效电路模型.该等效电路模型考虑了准饱和效应和自热效应等，模型分为本征和非本征两部分，物理意义清晰，拓扑结构相对简单.该模型嵌入了PSPICE软件的DEVEO(器件方程开发包)中.在PSPICE软件资源的支持下，利用该模型对SiGe HBT器件进行了交直流特性模拟分析，模拟结果与理论分析结果相一致，并且与文献报道的结果符合较好.关键词：SiGe HBT等效电路模型PSPICE
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| 关 键 词： | SiGe HBT 等效电路模型 PSPICE |
| 文章编号： | 1000-3290/2006/55(01)/0403-06 |
| 收稿时间： | 2004-12-21 |
| 修稿时间： | 2004-12-212005-05-24 |
SiGe HBT large signal equivalent circuit model |
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| Hu Hui-Yong,Zhang He-Ming,Lü Yi,Dai Xian-Ying,Hou Hui,Ou Jian-Feng,Wang Wei,Wang Xi-Yuan. SiGe HBT large signal equivalent circuit model[J]. Acta Physica Sinica, 2006, 55(1): 403-408 |
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| Authors: | Hu Hui-Yong Zhang He-Ming Lü Yi Dai Xian-Ying Hou Hui Ou Jian-Feng Wang Wei Wang Xi-Yuan |
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| Abstract: | A large signal equivalent circuit model for SiGe HBT is established based on the physical model of the transistor. The quasi saturation effect and the self-heating effect are taken into account in this equivalent circuit model. The model is composed of the intrinsic and the extrinsic parts, and has the features of clear physical meaning and simple topology. The model is embedded in the DEVEQ(Device Equations Developer) of PSPICE and simulated and analyzed by the PSPICE. The results conform to the theoretically analyzed conclusion and are in accordance with the published results in the literature. |
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| Keywords: | SiGe HBT PSPICE |
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