Optical and transport properties of δ-doped pseudomorphic AlGaAs/InGaAs/GaAs structures |
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| Authors: | W Z Shen W G Tang S C Shen A Dimoulas |
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| Institution: | 1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, 200083, Shanghai, Peoples Republic of China
2. Foundation for Research and Technology-Hellas, Heraklion, P.O. Box 1527, 71110, Crete, Greece
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| Abstract: | We investigate the effects of spacer layer thickness on the optical and transport properties of the n-typeδ-doped pseudomorphic Al0.30Ga0.70As/In0.15Ga0.85As / GaAs structures. Aδ-doped AlGaAs/InGaAs/GaAs structure with a 6nm spacer layer yields a sheet carrier concentration of 1.5×1012 cm?2 at 77K with electron mobility of 6.4×103 cm2/Vs, 3.11×104 cm2/Vs, and 3.45×104 cm2/Vs at room temperature, 77 and 20K, respectively. The effects of the different scattering mechanisms on luminescence linewidth and electron mobility have also been discussed. |
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