Selective area epitaxy of InP/GaInAsP heterostructures by MOMBE

This study reports on the selective area growth of InP/GaInAsP layers and heterostructures by metaloganic molecular beam epitaxy (MOMBE). It was found that neither the growth rate nor the material composition for GaInAsP depends on the area where material growth takes place. This enables a flexible SiO₂ mask to be designed independent of the aspect ratio. The use of slightly misoriented substrates allows the selective growth of planar structures having nearly perfectly vertical side walls even for 2 μm thick layers or narrow stripes to take place.