Untersuchung von Halbleiter-Sperrschichtzählern bis 4,2 °K |
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| Authors: | C W Fabjan M Kenawy H Rauch |
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| Institution: | 1. Atominstitut der ?sterreichischen Hochschulen, Wien
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| Abstract: | The behaviour of Semiconductor Surface Barrier Detectors has been studied in the temperature range from 300 °K to 4.2 °K. Measurements of the resolution forα- andβ-particles are given. The mean energy? required for producing an electron-hole-pair in Si is found to be 3.54±0.10 eV at 279 °K, and 3.72±0,11 eV at 78 °K and 4.2 °K respectively. Measured rise time of detector impulses is compared with theoretical values. |
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