Photoluminescence of the layered compound CdInGaS4 |
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| Authors: | T. Irie H. Miyashita S. Endo H. Nakanishi |
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| Affiliation: | (1) Department of Electrical Engineering, Faculty of Engineering, Science University of Tokyo, Shinjuku-ku, 162 Tokyo;(2) Department of Electrical Engineering, Faculty of Science and Technology, Science University of Tokyo, Noda, 278 Chiba;(3) Present address: Dainippon Ink and Chemicals, Inc., Japan |
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| Abstract: | Summary The photoluminescence of the layered compound CdInGaS4 was measured and analysed. The broad emission band at about 1.95 eV was found to be composed of three bands peaking at 2.16, 1.98 and 1.76 eV at 4.8K. These bands are due to free-to-bound or donor-to-acceptor transitions. We have found a new emission band peaking at 2.38 eV. This band shows that peak intensity markedly depends on the position in the crystal and is related to localized centres. The origin of the centres is discussed. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982. |
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| Keywords: | Photoluminescence |
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