| 微电子重大发展态势分析 |
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| 引用本文： | 许居衍.微电子重大发展态势分析[J].中国电子科学研究院学报,2006,1(3):215-218,222. |
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| 作者姓名： | 许居衍 |
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| 作者单位： | 中国电子科技集团公司第58研究所,江苏,无锡,214035 |
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| 摘 要： | 从“硅技术是否已出现新的发展态势？”、“推动技术进步的模式是否在演变？”和“在这些演变中我们要注视些什么？”三个方面，探讨主流半导体技术（硅技术）发展阶段特点及其创新走向。分析指出，电子系统设计将在下一波硅技术进步中起着重要的作用，并以此为依据，讨论中电科技集团公司发挥综合优势，在我国电子技术领域中，发挥应有的主力军作用。
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| 关 键 词： | 后摩尔定律时代 硅产品特征循环 系统级芯片设计 对策 |
| 文章编号： | 1673-5692（2006）03-215-04 |
| 收稿时间： | 2006-03-20 |
| 修稿时间： | 2006-03-202006-05-30 |
Analysis of Great Development Tendency of Micro-electronics |
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| XU Ju-yan.Analysis of Great Development Tendency of Micro-electronics[J].Journal of China Academy of Electronics and Information Technology,2006,1(3):215-218,222. |
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| Authors: | XU Ju-yan |
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| Institution: | The 58th Research Institute of CETC, Jiangsu Wuxi 214035, China |
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| Abstract: | From the aspects of whether has appeared new technology tendency in silicon technology?,whether the mode of technology development is changing? and what is our focus in changing?,discusses development stage characteristics and innovation tendency of mainstream semiconductor technology(silicon technology).Analysis states that electronics system design will play very important role in next silicon technology development and then indicates CETE will play main force role in electronics technology field. |
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| Keywords: | Post-Moore law period silicon product characteristics cycle system level CMOS chip design strategy |
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