| Oxide-apertured VCSEL with short period superlattice |
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| 作者姓名： | 李林 钟景昌 张永明 苏伟 赵英杰 晏长岭 郝永琴 姜晓光 |
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| 作者单位： | National Key Lab of High Power Semiconductor Lasers，Changchun University of Science and Technology，Changchun 130022，National Key Lab of High Power Semiconductor Lasers，Changchun University of Science and Technology，Changchun 130022，National Key Lab of High Power Semiconductor Lasers，Changchun University of Science and Technology，Changchun 130022，National Key Lab of High Power Semiconductor Lasers，Changchun University of Science and Technology，Changchun 130022，National Key Lab of High Power Semiconductor Lasers，Changchun University of Science and Technology，Changchun 130022，National Key Lab of High Power Semiconductor Lasers，Changchun University of Science and Technology，Changchun 130022，National Key Lab of High Power Semiconductor Lasers，Changchun University of Science and Technology，Changchun 130022，National Key Lab of High Power Semiconductor Lasers，Changchun University of Science and Technology，Changchun 130022 |
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| 基金项目： | ThisworkwassupportedbytheNationalNaturalScienceFoundationofChinaunderGrantNo.60306004. |
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| 摘 要： | Novel distributed Bragg reflectors (DBRs) with 4.5 pairs of GaAs/AlAs short period superlattice (SPS) used in oxide-apertured vertical-cavity surface-emitting lasers (VCSELs) were designed. The structure of a 22-period Al0.9Ga0.1 As (69.5 nm)/4.5-pair GaAs (10 nm)-AlAs (1.9 nm)] DBR was grown on an n+ GaAs substrate (100) 2° off toward <111>A by molecular beam epitaxy. The emitting wavelength was 850 nm with low threshold current of about 2 mA, corresponding to the threshold current density of 2 kA/cm2. The maximum output power was more than 1 mW. The VCSEL device temperature was increased by heating ambient temperature from 20 to 100℃ and the threshold current increased slowly with the increase of temperature.
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