Preparation of HgJ2 single crystals and the effect of doping upon their physical properties

HgJ₂ single crystals both pure and doped were grown from an acetone solution using the method of the slow solvent evaporation. The iodides NaJ, KJ, SrJ₂, CdJ₂, NH₄J were used as doping materials in concentrations from 0.01 to 2.0 wt%. The grown crystals were studied with respect to the influence of impurity doping on the electric conductivity and the phase transitions at atmospheric pressure (the DTA method) and high pressure as well (with the help of the high pressure optical cell).