Far-infrared pump-probe measurement of the lifetime of the 2p?1 shallow donor level in n-GaAs |
| |
Authors: | A J Kalkman H P M Pellemans T O Klaassen and W Th Wenckebach |
| |
Institution: | (1) Department of Applied Physics, Delft University of Technology, P. O. Box 5046, 2600 GA Delft, The Netherlands |
| |
Abstract: | The low temperature lifetime of electrons excited in the 2p–1 donor level of n-GaAs has been studied in a far-infrared pump-probe experiment. The measurement has been carried out using a pulsed far-infrared molecular gas laser working at a wavelength of 292µm, with the sample in a magnetic field of 5.1 T, resonant with the 1so–2p–1 transition. Two FIR pulses are sliced from one FIR-laser pulse by means of optical switching techniques using two Q-switched Nd:YAG lasers. The first pulse is used to saturate the transition, while the second pulse probes the return of the population in the excited state towards thermal equilibrium as a function of the time delay after the excitation pulse. The value of 350±50 ns found for the lifetime falls in line with CW saturation results on materials with other doping concentrations. |
| |
Keywords: | |
本文献已被 SpringerLink 等数据库收录! |
|