| 立方半导体中双空位态的电子结构(Ⅱ)——能级和简单的物理模型 |
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| 引用本文： | 茅德强,任尚元,李名复.立方半导体中双空位态的电子结构(Ⅱ)——能级和简单的物理模型[J].物理学报,1986,35(6):808-811. |
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| 作者姓名： | 茅德强 任尚元 李名复 |
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| 作者单位： | (1)中国科学技术大学物理系; (2)中国科学技术大学研究生院 |
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| 摘 要： | 利用文献1]中给出的基本方程和Vogl等人的紧束缚哈密顿量,计算了十多种立方半导体的理想双空位在禁带中引入的能级,并用了一个简单的“空位分子”模型来讨论双空位态的物理问题。
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| 收稿时间： | 1985-09-23 |
ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODEL |
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| MAO DE-QIANG,REN SHANG-YUAN and LI MING-FU.ELECTRONIC STRUCTURE OF THE DIVACANCY IN SEMICONDUCTORS (II)——ENERGY LEVELS AND A SIMPLE PHYSICAL MODEL[J].Acta Physica Sinica,1986,35(6):808-811. |
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| Authors: | MAO DE-QIANG REN SHANG-YUAN and LI MING-FU |
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| Abstract: | The energy levels of the ideal divacancy states in band gap for more than 10 cubic semiconductors are invesgated by using the basic equations given in ref. 1] and the tight binding Hamiltonian given by vogl et al. A simple physical model is used to describe the basic physics of the divacancy problem. |
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