Investigation of glow-discharge-induced morphology modifications on silicon wafers and chromium conversion coatings by AFM and rugosimetry |
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Authors: | Julien Malherbe Hervé Martinez Beatriz Fernández Olivier F X Donard |
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Institution: | 1. IPREM-LCABIE (UMR CNRS 5254), Université de Pau et des Pays de l’Adour, 2 Av. Président Angot, 64053, Pau, France 2. IPREM-ECP (UMR CNRS 5254), Université de Pau et des Pays de l’Adour, 2 Av. Président Angot, 64053, Pau, France 3. Department of Physical and Analytical Chemistry, Faculty of Chemistry, University of Oviedo, Julian Clavería, 8, 33006, Oviedo, Spain
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Abstract: | The effect of radiofrequency glow-discharge sputtering on the sample surface in terms of modifications in the surface morphology
were investigated in this work by using atomic force microscopy (AFM) and rugosimetry measurements. The influence of GD operating
parameters (e.g. rf power, discharge pressure and sputtering time) on surface roughening was investigated using two different
types of samples: mirror-polished and homogeneous silicon wafers and chromate conversion coatings (CCCs). Surface morphology
changes produced by GD sputtering into the sample surface were carefully investigated by AFM and rugosimetry, both at the
original sample surface and at the bottom of GD craters using different GD experimental conditions, such as the sputtering
time (from 1 s to 20 min), rf forward power (20–60 W for the Si wafer and 10–60 W for the CCC), and discharge pressure (400–1,000 Pa
for the Si wafer and 500–1000 Pa for the CCC). In the present study, GD-induced morphology modifications were observed after
rf-GD-OES analysis, both for the silicon wafers and the CCC. Additionally, the changes observed in surface roughness after
GD sputtering were found to be sample-dependent, changing the proportion, shape and roughness of the micro-sized patterns
and holes with the sample matrix and the GD conditions. |
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Keywords: | |
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