Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers |
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Authors: | Fang Kai Li Nian Li Peng Qian Zhenghua Kolesov V. Kuznetsova I. |
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Affiliation: | 1. State Key Laboratory of Mechanics and Control of Mechanical Structures, College of Aerospace Engineering, Nanjing University of Aeronautics and Astronautics, Nanjing 210016, China;2. Nanjing University of Aeronautics and Astronautics Shenzhen Research Institute, Shenzhen 518057, Guangdong Province, China;3. Kotel'nikov Institute of Radio Engineering and Electronics of Russian Academy of Sciences, Moscow 125009, Russia |
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Abstract: | In this paper, we propose a specific two-layer model consisting of a functionally graded (FG) layer and a piezoelectric semiconductor (PS) layer. Based on the macroscopic theory of PS materials, the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and PN junctions are investigated. The semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power series. Results show that the antisymmetry of the potential and electron concentration distributions in homogeneous n-type PS fibers is destroyed due to the material inhomogeneity of the attached FG layer. In addition, by creating jump discontinuities in the material properties of the FG layer, potential barriers/wells can be produced in the middle of the fiber. Similarly, the potential barrier configuration near the interface of a homogeneous PS PN junction can also be manipulated in this way, which offers a new choice for the design of PN junction based devices. |
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Keywords: | piezoelectric semiconductor (PS) functionally graded (FG) material composite structure PN junction |
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