Experimental study of actively mode-locked semiconductor laser with grating external cavity |
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引用本文: | Xianhua Wang,Guofu Chen,Dongfeng Liu,Lin Xiu,Shuangchen Ruan. Experimental study of actively mode-locked semiconductor laser with grating external cavity[J]. Chinese Journal of Lasers, 1992, 1(3): 193-202 |
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作者姓名: | Xianhua Wang Guofu Chen Dongfeng Liu Lin Xiu Shuangchen Ruan |
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作者单位: | Xianhua Wang:Xi'an Institute of Optics & Precision Mechanics, Academia Sinica, Xi'an 710068 Guofu Chen:Xi'an Institute of Optics & Precision Mechanics, Academia Sinica, Xi'an 710068 Dongfeng Liu:Xi'an Institute of Optics & Precision Mechanics, Academia Sinica, Xi'an 710068 Lin Xiu:Xi'an Institute of Optics & Precision Mechanics, Academia Sinica, Xi'an 710068 Shuangchen Ruan:Xi'an Institute of Optics & Precision Mechanics, Academia Sinica, Xi'an 710068
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摘 要: | In this paper,complete mode-locking optical pulses have been obtained froman actively mode-locked GaAs/GaAlAs semiconductor laser with grating external cavity.Theshortest optical pulse is 7.3 ps measured by second harmonic generation(SHG)autocorrelator.The repetition rate is 995.12 MHz and the central wavelength is 798.4 nm.The effect ofmodulation frequency,modulation current,and bias current on the optical pulses width areinvestigated.
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收稿时间: | 1991-11-19 |
Experimental study of actively mode-locked semiconductor laser with grating external cavity |
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Abstract: | In this paper, complete mode-locking optical pulses have been obtained from an actively mode-locked GaAs/GaAlAs semiconductor laser with grating external cavity. The shortest optical pulse is 7. 3 ps measured by second harmonic generation(SHG) autocorrelator. The repetition rate is 995. 12 MHz and the central wavelength is 798. 4 nm. The effect of modulation frequency, modulation current, and bias current on the optical pulses width are investigated. |
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Keywords: | mode-locking semiconductor laser grating external cavity generation of ultrashort optical pulses |
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