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Experimental study of actively mode-locked semiconductor laser with grating external cavity
作者姓名:Xianhua Wang  Guofu Chen  Dongfeng Liu  Lin Xiu  Shuangchen Ruan
作者单位:Xianhua Wang:Xi'an Institute of Optics & Precision Mechanics, Academia Sinica, Xi'an 710068
Guofu Chen:Xi'an Institute of Optics & Precision Mechanics, Academia Sinica, Xi'an 710068
Dongfeng Liu:Xi'an Institute of Optics & Precision Mechanics, Academia Sinica, Xi'an 710068
Lin Xiu:Xi'an Institute of Optics & Precision Mechanics, Academia Sinica, Xi'an 710068
Shuangchen Ruan:Xi'an Institute of Optics & Precision Mechanics, Academia Sinica, Xi'an 710068
摘    要:In this paper,complete mode-locking optical pulses have been obtained froman actively mode-locked GaAs/GaAlAs semiconductor laser with grating external cavity.Theshortest optical pulse is 7.3 ps measured by second harmonic generation(SHG)autocorrelator.The repetition rate is 995.12 MHz and the central wavelength is 798.4 nm.The effect ofmodulation frequency,modulation current,and bias current on the optical pulses width areinvestigated.

收稿时间:1991/11/19

Experimental study of actively mode-locked semiconductor laser with grating external cavity
Xianhua Wang,Guofu Chen,Dongfeng Liu,Lin Xiu,Shuangchen Ruan.Experimental study of actively mode-locked semiconductor laser with grating external cavity[J].中国激光(英文版),1992,1(3):193-202.
Abstract:In this paper, complete mode-locking optical pulses have been obtained from an actively mode-locked GaAs/GaAlAs semiconductor laser with grating external cavity. The shortest optical pulse is 7. 3 ps measured by second harmonic generation(SHG) autocorrelator. The repetition rate is 995. 12 MHz and the central wavelength is 798. 4 nm. The effect of modulation frequency, modulation current, and bias current on the optical pulses width are investigated.
Keywords:mode-locking  semiconductor laser  grating external cavity  generation of ultrashort optical pulses
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