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Positron annihilation study on nanometer cavities in porous silicon |
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| Authors: | Y. Itoh H. Murakami A. Kinoshita |
| Affiliation: | (1) The Institute of Physical and Chemical Research (RIKEN), Hirosawa, Wako-shi, 351-01 Saitama, Japan;(2) Department of Physics, Faculty of Education, Tokyo Gakugei University, Koganei-shi, 184 Tokyo, Japan;(3) Faculty of Science and Engineering, Tokyo Denki University, Hatoyama, 350-03 Saitama, Japan |
| Abstract: | Measurements were carried out on the positron lifetime and the Doppler broadening of its annihilation radiation in porous silicon. A very long lifetime of a few tens of nanoseconds was found. TheS parameter increased upon annealing in vacuum at 350 °C. It is pointed out that positron/positronium spectroscopy is very useful for the study of physical and chemical properties of porous silicon. |
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