Investigation of silicon-on-sapphire structures by means of TEM |
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| Authors: | D A Pavlov P A Shilyaev E V Korotkov N O Krivulin A I Bobrov |
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| Institution: | 1. Lobachevsky State University, Nizhni Novgorod, 603950, Russia
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| Abstract: | The initial stages of the molecular beam epitaxy (MBE) growth of silicon-on-sapphire (SOS) are investigated via transmission electron microscopy (TEM). The sample preparation procedure is improved to study SOS structures by TEM. It is shown that silicon in the shape of 3D islets can form on a continuous silicon layer grown on sapphire. |
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