Formation of conductive layers inside diamond by hydrogen ion implantation and subsequent thermal treatment at low or high pressures |
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| Authors: | V P Popov L N Safronov O V Naumova V A Volodin I N Kupriyanov Yu N Pal’yanov |
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| Institution: | 1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
2. Sobolev Institute of Geology and Mineralogy, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia
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| Abstract: | (111) synthetic HPTP diamond plates are irradiated by H 2 + 50 keV ions in the range of the fluences of 1?13 × 1016 sm?2 and annealed in vacuum at 1 mPa (VPHT, 500?C1600°C) or at high HPHT parameters (4.0?C7.5 GPa, 1200?C1550°C). It is shown by measuring the layer conductivity and Raman light scattering that after VPHT annealing, a buried layer of glassy carbon 10?C100 nm thick with low resistance (??1 kOhm/??) is formed, followed by HPHT with high resistance (??1 MOhm/??) and hopping transport along defects. |
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