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Investigating the optical properties of a near-surface layer in silicon implanted by zinc after thermal annealing |
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| Authors: | V V Privezentsev M V Chukichev R V Mironov Yu V Krivenkov |
| Institution: | 1. Physicotechnical Institute, Russian Academy of Sciences, Moscow, 117218, Russia 2. Faculty of Physics, Moscow State University, Moscow, 119991, Russia 3. Fiber Optics Research Center, Russian Academy of Sciences, Moscow, 119333, Russia 4. Molecular Electronics Research Institute and Micron Factory, Moscow, 124460, Russia |
| Abstract: | Changes in the optical properties of a Si layer broken as a result of implantation by Zn ions are investigated during thermal annealing. The investigations are performed by Raman scattering (RS), ellipsometry, and cathodoluminescence (CL). The implanted samples show a broken area with a thickness of about 60 nm with partial amorphization. Thermal treatment at 400°C results in the partial annealing of a radiation point defect while reducing the thickness of the broken layer to 40 nm. The broken layer was completely restored after high-temperature annealing at 700°C. |
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