Dynamic response of a unijunction transistor in the presence of a magnetic field |
| |
| Affiliation: | 1. Electrical and Computer Engineering Department, Semnan University, Semnan, Iran;2. Electrical and Computer Engineering Department, University of Tehran, Tehran, Iran;1. Multiscale Manufacturing Laboratory, Department of Mechanical Engineering, USA;2. Department of Bioengineering Clemson University, Clemson, SC, USA;1. Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, TX 78712, USA;2. Department of Mechanical Engineering, Boston University, Boston, MA 02215, USA;3. Department of Mechanical and Manufacturing Engineering, University of Calgary, 40 Research Place NW, Calgary, AB T2L 1Y6, Canada;4. Department of Mechanical Engineering, Texas A&M University, College Station, TX, 77843, USA;5. School of Engineering, Brown University, Providence, RI 02912, USA;6. Department of Aerospace Engineering & Engineering Mechanics, University of Texas at Austin, Austin, TX 78712, USA;7. Department of Mechanical Engineering, University of Maryland, College Park, MD 20742, USA;8. Department of Applied Physics, Stanford University, Stanford, CA 94305, USA;9. Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305, USA;10. Department of Materials Science & NanoEngineering, Rice University, Houston, TX 77005, USA;11. Department of Chemistry, Rice University, Houston, TX 77005, USA;12. The Richard E. Smalley Institute, Rice University, Houston, TX 77005, USA;13. Department of Mechanical and Aerospace Engineering, Syracuse University, Syracuse, NY 13244, USA;14. Institute of High Performance Computing, A*STAR, 138632, Singapore;15. Department of Mechanical and Aerospace Engineering, North Carolina State University, NC 27695, USA;1. Advanced Materials Processing and Analysis Center, University of Central Florida, Orlando, FL 32816, USA;2. Nanoscience Technology Center, University of Central Florida, Orlando, FL 32816, USA;3. Department of Materials Science and Engineering, University of Central Florida, Orlando, FL 32816, USA;4. College of Medicine, University of Central Florida, Orlando, FL 32816, USA;1. School of Materials Science and Engineering, UNSW, Sydney, NSW, 2052, Australia;2. Department of Materials Science and Engineering, National University of Singapore, 119260, Singapore;3. Global Innovative Centre for Advanced Nanomaterials, School of Engineering, The University of Newcastle, Callaghan, 2308, New South Wales, Australia |
| |
| Abstract: | The influence of a magnetic field on the small-signal dynamic response of a unijunction transistor (UJT) and the performance of a UJT sine-wave oscillator in the presence of an externally applied magnetic field are discussed. A theoretical analysis of the magnetically-induced changes in differential negative resistance and inductance (which describe the dynamic response of a UJT) is proposed for low frequencies. The change in differential negative resistance and inductance due to a magnetic field has been attributed to the corresponding change in basic electrophysical parameters (carrier mobility and carrier lifetime) of the device under investigation. This theoretical analysis has been experimentally verified. Subsequently, these results have been used in a study of magnetically-induced changes in the amplitude and frequency of a UJT sine-wave oscillator. This study suggests its possible application as a magnetic transducer. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
