InGaAsSb/InP的MBE生长及特性

研究了InP基InGaAsSb外延材料受生长温度和Ⅴ/Ⅲ比的影响。实验中利用高能电子衍射(RHHEED)监测获得了合适的生长温度和Ⅴ/Ⅲ比,采用扫描电子显微镜 (SEM)、X射线光电子能谱(XPS)、X射线双晶衍射(XRDCD)和光致发光(PL)谱等方法研究了InGaAsSb薄膜材料的表面形貌、结晶质量和发光特性。通过控制生长温度和Ⅴ/Ⅲ比,获得了X射线衍射峰半峰全宽较窄的高质量的外延材料。

Growth and Characterization of InGaAsSb on InP Substrate by Molecular Beam Epitaxy

In this work,the InGaAsSb epilayers were grown on InP substrate, the reflection high-energy electron diffraction(RHEED) was used for in-situ monitoring InGaAsSb surface morphology. We systematically studied the effect of the growth temperature and Ⅴ/Ⅲ ratio on a serious of heteroepitaxial quality InGaAsSb films.Optimized the growth-temperature, the epilayers were performed at maintaining binary growth in the cases of 350 ℃,and the folllowing higher quality film appears at 400 ℃.The epitaxial thin films characterization were presented and analyzed, such as surface morphology, interface inspection,crystalline quality and photoluminecence characteristic by scanning electron microscopy (SEM), X-ray photoelectron spectrum (XPS),X-ray double-crystal diffraction (XRDCD) and photoluminecence (PL) etc.We also showed some questions about the growth temperature and Ⅴ/Ⅲ ratio. In conclusions, the high quality InGaAsSb epilayers with optimized growth temperature and Ⅴ/Ⅲ ratio were obtained, which exhibits a XRD peak with narrow full-width at half maximum (FWHM).