Influence of defects in a silicon dioxide thin layer on the processes of silicidation in the Fe/SiO2/Si(001) system |
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| Authors: | V V Balashev V V Korobtsov T A Pisarenko and E A Chusovitin |
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| Institution: | (1) Institute of Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, ul. Radio 5, Vladivostok, 660041, Russia;(2) Institute of Physics and Information Technology, Far East State University, ul. Sukhanova 8, Vladivostok, 690950, Russia |
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| Abstract: | The kinetics of the evolution of the structure and phase composition of the Fe/SiO2/Si(001) system under different conditions for deposition of the iron layer and subsequent annealing is considered. It is
established that the SiO2 thin layer (∼1 nm) is not destroyed during iron deposition over a wide temperature range from 20 to 650°C. As a result, iron
films with different morphologies are formed on the surface of the oxide. Annealing leads to the destruction of the SiO2 layer at defect sites. This brings about the interaction of iron atoms with the silicon substrate and subsequent formation
of iron silicides.
Original Russian Text ? V.V. Balashev, V.V. Korobtsov, T.A. Pisarenko, E.A. Chusovitin, 2009, published in Fizika Tverdogo
Tela, 2009, Vol. 51, No. 3, pp. 565–571. |
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