| MoxGe1-x,MoxSi1-x薄膜的非晶形成成份及超导转变温度 |
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| 引用本文： | 蒙如玲,周萍,赵忠贤,郭树权,李林. MoxGe1-x,MoxSi1-x薄膜的非晶形成成份及超导转变温度[J]. 物理学报, 1984, 33(5): 714-717 |
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| 作者姓名： | 蒙如玲 周萍 赵忠贤 郭树权 李林 |
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| 作者单位： | 中国科学院物理研究所 |
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| 摘 要： | 用直流吸气溅射法在液氮冷底板上分别制备了MoxGe1-x,MoxSi1-x的薄膜。其形成非晶的成份分别为Ge>22at%,Si>18at％。超导转变临界温度Tc在非晶状态下随着Ge,Si的含量增加而下降(约6—3K)。非晶Mo77Ge23膜的晶化温度为780℃,而非晶Mo78Si22膜的晶化温度为480℃。关键词：
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| 收稿时间： | 1983-12-15 |
THE SUPERCONDUCTING TRANSITION TEMPERATURE AND COMPOSITION RANG FOR THE FORMATION OF AN AMORPHOUS PHASE IN THE MoxGe1-x, MoxSi1-x FILMS |
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| MENG RU-LING,ZHOU PING,ZHAO ZHONG-XIAN,GUO SHU-QUAN and LI LIN. THE SUPERCONDUCTING TRANSITION TEMPERATURE AND COMPOSITION RANG FOR THE FORMATION OF AN AMORPHOUS PHASE IN THE MoxGe1-x, MoxSi1-x FILMS[J]. Acta Physica Sinica, 1984, 33(5): 714-717 |
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| Authors: | MENG RU-LING ZHOU PING ZHAO ZHONG-XIAN GUO SHU-QUAN LI LIN |
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| Abstract: | MoxGe1-x and MoxSi1-x films are prepared by d.c. getter sputtering method onto liquid nitrogen cooled substrate. The compositions forming the amorphous state are found to be Ge>22at% and Si>18at% respectively. The superconducting transition temperature decrease with the increase of Ge, Si content from 6K to 3K in the amorphous state.The crystallization temperature of a-Mo77Ge23 is 780℃ and that of a-Mo78Si22 is 480℃. |
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