New experiments on the electrodeposition of iron in porous silicon

We report here the study about the electrodeposition of iron into porous silicon made in p-type (15–25 Ω cm) silicon wafers. Chronoamperometry measurements were performed to show that the iron nucleation does not start only at the bottom of the pores, which is confirmed by the high quality SEM images. The energy band of the heterostructure Si/PS is used to explain the mechanisms involved in the electrodeposition of iron and the porous silicon formation. This new structure (iron and porous silicon), once well controlled might have an influence on the new device developments.