下一代光学掩模制造技术

尽管其它光刻技术在不断快速发展，然而在0．13μm及0．13μm以下集成电路制造水平上，光学光刻仍然具有强大的生命力。随着光学光刻极限分辨率的不断提高，当代光学掩模制造技术面临着越来越严重的挑战。本文对下一代光学掩模工艺技术的技术指标和面临的技术困难进行了论述，并对其中一些关键的技术解决方案进行了简要分析。

The Fabrication Technique for Next Generation Photomask

Optical lithography will be still very strong for 0. 13um Integrated Circuits and below, even though other lithography techniques are still being developed rapidly, With the continuous improvement of optical lithography limit resolution, The current photomask fabrication technique is facing with more and more serious challenge. In this paper, The technology guideline and the technology difficulty for next generation photomask processes are discussed, and some pivotal technology resolving projects are also analysed briefly.