| Si^＋注入GaAs及其退火中SiO2包封的作用 |
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| 引用本文： | 钮利荣,杨端良.Si^＋注入GaAs及其退火中SiO2包封的作用[J].微电子技术,2000,28(4):28-31. |
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| 作者姓名： | 钮利荣 杨端良 |
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| 作者单位： | 南京电子器件研究所!南京，210016，南京电子器件研究所!南京，210016，南京电子器件研究所!南京，210016，南京电子器件研究所!南京，210016 |
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| 摘 要： | 对Ｓｉ＾＋注入ＧａＡｓ的前后及其退火的前后用和不用ＳｉＯ２包封进行了对比实验。包封退火大大提高了注入离子的激活率；在包封退火的情况下，光片注入的要比贯穿注入的载流子分布窄。所以，光片注入后包封退火较实用，它使载流子分布窄，激活率高。
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| 关 键 词： | 注入 退火 包封 硅 砷化镓 二氧化硅 |
The Influences SiO2 Cap Upon Si Implantation and Its RTA in GaAs |
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| Niu Lirong,Yang Duanliang,Li Zhongpeng,Ma Shiman.The Influences SiO2 Cap Upon Si Implantation and Its RTA in GaAs[J].Microelectronic Technology,2000,28(4):28-31. |
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| Authors: | Niu Lirong Yang Duanliang Li Zhongpeng Ma Shiman |
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| Abstract: | This paper described the result of implantation of Si into GaAs and its RTA (rapid thermal annealing) with or without cap. We draw a conclusion that RTA with cap enhances the activatity of the implanted ion; and in the case of RTA with cap, the distri- bution of the carriers of implanted without cap is narrower than with cap. Therefore, im- plantation without the cap and RTA with cap are practical which lead to a higher activation and a narrower distribution of the carriers. |
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| Keywords: | Implanting Annealing Cap Activation Carriers distribution |
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