高择优取向硅基含钾铌酸锶钡（K:SBN）薄膜的制备与性能

采用NbCl5作为先驱物，利用溶胶-凝胶法在Si(100)衬底上成功获得高度择优取向的铁电铌酸锶钡(SBN)薄膜.与用Nb(OC2H5)5作为先驱物的SBN薄膜相比，NbCl5配制的薄膜前驱溶液中含有一定数量的K离子.K离子的含量对SBN薄膜取向的影响存在一个最优值.二次离子质谱测试发现，K离子对SBN晶胞的溶入和对Si衬底的渗透能够同时使SBN晶胞和Si晶胞产生微小扭曲，从而起到调整薄膜与衬底的匹配关系，并最终促使SBN薄膜c轴高度择优取向的生长.测试了薄膜的光学特性. 关键词： 铌酸锶钡 溶胶-凝胶方法 择优取向

Growth of highly c-axis oriented K:SBN thin films on Si(100) by the sol-gel method

Ferroelectric SrxBa1-xNb2O6 (0.2＜x＜0.8, SBN100 x＝ thin films of highly preferred c axis orientation have been grown on Si (100) substrate by the sol-gel method with post annealing at 1000°C. Investigated by x-ray diffraction and second ion mass spectrum,we observed that the SBN thin films prepared using NbCl5 precursor solution contained K+ ions, compared with Nb(OC2H5)5 precursored SBN films. By choosing appropriate contents of K+ there exists the optimum preferred orientation in SBN thin film.K ions dissolving in SBN cell and entering Si substrate can make SBN cell and Si cell a small twist simultaneously,which improves the matching of the film and the substrate to promote the high c axis superior growth.Finally,the optic characteristics of thin films have been tested.