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Comparison of laser-wavelength operation for drilling of via holes in AlGaN/GaN HEMTs on SiC substrates |
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| Authors: | T J Anderson F Ren L Covert J Lin S J Pearton T W Dalrymple C Bozada R C Fitch N Moser R G Bedford M Schimpf |
| Institution: | (1) Department of Chemical Engineering, University of Florida, 32611 Gainesville, FL;(2) Department of Electrical and Computer Engineering, University of Florida, 32611 Gainesville, FL;(3) Department of Material Science and Engineering, University of Florida, 32611 Gainesville, FL;(4) Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, 45433-7322 Dayton, OH;(5) U.S. Laser Corporation, 07481 Wyckoff, NJ |
| Abstract: | By using a frequency-tripled Nd:YVO4 laser source (355 nm) for drilling through-wafer via holes in SiC substrates, we can reduce the surface contamination and achieve better smoothness inside the via holes compared to use of the more common 1064-nm Nd:YVO4 laser. The sheet and contact resistance of AlGaN/GaN HEMT layers grown on SiC substrates were similar after formation of vias by 355-nm laser drilling to those of the undrilled reference sample. By sharp contrast, 1064-nm laser drilling produces significant redeposition of ablated material around the via and degrades the electrical properties of the HEMT layers. |
| Keywords: | Laser drilling via holes SiC AlGaN/GaN heterostructures high electron mobility transistors |
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