Charge carrier governed temperature dependence of the electric field gradient for111Cd in tellurium |
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Authors: | H. Barfuß G. Böhnlein H. Hohenstein W. Kreische H. Niedrig A. Reimer |
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Affiliation: | (1) Physikalisches Institut, Universität Erlangen-Nürnberg, Erwin-Rommel-Strasse 1, D-8520 Erlangen, Federal Republic of Germany |
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Abstract: | Using the TDPAC-method with the proble nucleus111Cd the electric quadrupole interaction (QI) in the trigonal semiconductor Te has been investigated in the temperature range 77 KT655 K. In contrast to most metals the quadrupole frequencyvQ increases with increasing temperature. This is a consequence of the fact that in metals the charge carrier density is temperature independent, whereas in semiconductors it strongly increases with temperature. A comparison between the temperature variation of the quadrupole coupling constantvQ and that of the charge carrier density leads to the conclusion that the QI in Te is governed by changes in the free electron density. |
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