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Interdiffusion in two-layer Pd/Ag films III. TEM investigation of diffusion-induced grain boundary migration
Authors:V M Kosevich  A N Gladkikh  M V Karpovskyi  V N Klimenko
Institution:(1) Department of Theoretical and Experimental Physics, Kharkov Polytechnical Institute, Kharkov, Ukraine;(2) Present address: Department of Electronic Devices and Materials, Tel Aviv University, 69978 Tel Aviv, Israel;(3) Present address: School of Physics and Astronomy, Tel Aviv University, 69978 Tel Aviv, Israel
Abstract:Diffusion-induced grain boundary migration (DIGM) is studied by the transmission electron microscopy method in polycrystalline two-layer Pd/Ag thin films with a grain size (100–2000 nm). In addition to the typical features of DIGM known for coarse-grained bulk objects and foils, new features are found which are caused by a quite dense network of triple junctions and by misfit dislocations: fast increase of grain boundary curvature and inclination; back motion of grain boundaries owing to recrystallization forces and termination of DIGM. Homogenization resulted from diffusion-induced migration of misfit dislocations is observed in addition to DIGM.
Keywords:grain boundary migration  diffusion  triple junctions  misfit dislocations  transmission electron microscopy
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