| 基于普通三极管电光调Q驱动器的实验研究 |
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| 引用本文： | 陈伟,孙峰,刘在洲.基于普通三极管电光调Q驱动器的实验研究[J].光学与光电技术,2011,9(6):74-77. |
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| 作者姓名： | 陈伟 孙峰 刘在洲 |
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| 作者单位： | 华中光电技术研究所-武汉光电国家实验室,湖北武汉,430073 |
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| 摘 要： | 利用三极管的雪崩效应获得高电压、快速电光调Q脉冲存在雪崩效应不稳定、输出电压调节范围小、供电电压高等缺点。针对以上不足，采取在三极管基射极加电感使雪崩效应稳定，用高压场效应管替代两个三极管提高输出电压调节范围，利用MarxBank电路，降低供电电压。实验结果表明：电光调Q脉冲前沿2ns，幅度3500-6000V连续可调...
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| 关 键 词： | 电光调Q 雪崩效应 电感 Marx Bank电路 |
Experiment Study of Eletro-Optics Q-Switched Driver Based on Normal Transistors |
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| CHEN Wei,SUN Feng,LIU Zai-zhou.Experiment Study of Eletro-Optics Q-Switched Driver Based on Normal Transistors[J].optics&optoelectronic technology,2011,9(6):74-77. |
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| Authors: | CHEN Wei SUN Feng LIU Zai-zhou |
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| Institution: | (Huazhong Institute of Electro-Optics—Wuhan National Laboratory for Optoelectronics,Wuhan 430073,China ) |
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| Abstract: | The transistors avalanche effect was used to obtain high voltage high speed eletro-optics Q-switched driving pulse. This method has three defects:instability of avalanche effect,short voltage adjust range and high voltage of power supply. Avalanche effect is stabilized by introducing inductance between transistor base and emission.Voltage adjustment range is increased by using a high voltage MOSFET instead of two transistors.Power supply voltage is reduced by using Marx Bank circuit.Experiment results show that the rise time of Q-switched pulse is about 2 ns,voltage magnitude is 3500～6 000 V, power supply voltage is 600 V. |
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| Keywords: | eletro-optics Q-switched avalanche effect inductance Marx Bank circuit |
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