Zn1-xCoxO稀磁半导体薄膜的结构及其磁性研究

利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn_1-xCo_xO (x＝0.01，0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn₁-xCo_xO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明，脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置，生成单一相的Zn_1-xCo_xO 稀磁半导体.通过对X射线吸收近边结构谱的分析，确定Zn_1-xCo_xO薄膜中存在O空位，表明Co离子与O空位的相互作用是诱导Zn_1-xCo_xO产生室温铁磁性的主要原因. 关键词： 1-xCo_xO稀磁半导体')" href="#">Zn_1-xCo_xO稀磁半导体 X射线吸收精细结构谱 脉冲激光气相沉积法

Structure and magnetic properties of Zn1-xCoxO thin film

Zn_1-xCo_xO (x=0.01, 0.02) dilute magnetic semiconductor thin films deposited on Si (001) substrates at 650℃ by pulsed laser deposition method were studied by X-ray absorption fine structure, X-ray diffraction and magnetic measurement. The typical ferromagnetic hysteresis curves were obtained by superconducting quantum interference device magnetometry at room temperature. The X-ray diffraction results showed that Zn_1-xCo_xO films were of the wurtzite structure. The X-ray absorption fine structure results revealed that the Co atoms were incorporated into the ZnO lattice and located at the substitutional Zn sites, and a homogeneous phase of Zn_1-xCo_xO was formed. Comparing the experimental curves with the theoretical calculation results, the additional peak C was assigned to the oxygen vacancies, which indicated that the ferromagnetism of Zn_1-xCo_xO films was strongly correlated with the existence of oxygen vacancies.