a Hynix Semiconductor, Ichon 467-701, South Korea;b Department of Electronic Engineering, Changwon National University, Changwon 641-773, South Korea;c Department of Electronics Engineering, Kookmin University, Seoul, South Korea
Abstract:
This paper proposes a new two-stage two-phase VPP charge pump configured in such a manner that the body effect and the threshold voltage loss are eliminated. The newly proposed circuit is fabricated using 0.18 μm triple-well CMOS process and the measurement result shows that the VPP level tracks 3VDD when VDD is above the threshold voltage.