| 基于分子结的分子电子器件电性能研究 |
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| 引用本文： | 左国防,雷新有,张建斌.基于分子结的分子电子器件电性能研究[J].现代电子技术,2010,33(10):168-171. |
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| 作者姓名： | 左国防 雷新有 张建斌 |
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| 作者单位： | 天水师范学院,生命科学与化学学院,甘肃,天水,741000 |
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| 基金项目： | 国家自然科学基金，甘肃省自然科学基金，甘肃省教育厅科研项目资助 |
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| 摘 要： | 介绍了分子电子学的发展背景,并通过电极、分子以及电极-分子接触界面的分子结技术,对电极-分子-电极结中的电子传递现象进行了解释。另外,结合STM和裂分结技术,探讨了分子结中分子电子的测试方法,并对基于分子结中的分子电子器件的库仑阻塞、Kondo效应以及动力学随机记忆等进行了讨论。
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| 关 键 词： | 分子结 分子电子学 分子导体 库化阻塞 |
Study of Electrical Properties of Molecular Electronic Devices Based on MMM Junction |
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| ZUO Guo-fang,LEI Xin-you,ZHANG Jian-bin.Study of Electrical Properties of Molecular Electronic Devices Based on MMM Junction[J].Modern Electronic Technique,2010,33(10):168-171. |
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| Authors: | ZUO Guo-fang LEI Xin-you ZHANG Jian-bin |
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| Institution: | ZUO Guo-fang,LEI Xin-you,ZHANG Jian-bin (College of Life Science , Chemistry,Tianshui Normal University,Tianshui 741000,China) |
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| Abstract: | The background of molecular electronics is introduced.The phenomenon of electron transfer in electrod-motecular-electrod junction is explained by the aid of the molecular junction technology.The methods of measuring the molecular electron in typical metal-molecule-metal(MMM) junction is discussed by junction technology of STM and break junction.In addition,Kondo effect,coulomb blockade and dynamics random access memory of molecular electron devices in molecular junction are discussed too. |
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| Keywords: | molecular junction molecular electronics molecular conductor coulomb blockade |
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