Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers期刊界 All Journals 搜尽天下杂志传播学术成果专业期刊搜索期刊信息化学术搜索

Investigations of defect evolution and basal plane dislocation elimination in CVD epitaxial growth of silicon carbide on eutectic etched epilayers

Authors:	Haizheng Song Tawhid Rana Tangali S. Sudarshan

Affiliation:	^a Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA

Abstract:

Keywords:	A1. Defects A1. Basal plane dislocation A1. Etching A3. Chemical vapor deposition processes A3. Vapor phase epitaxy B1. Silicon carbide
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