Surface reconstructions of the Si(100)–Ge system |
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Authors: | S. -J. Kahng J. -Y. Park Y. Kuk |
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Affiliation: | National Creative Research Initiative, Center for Sciences in Nanometer Scale, ISRC and Department of Physics, Seoul National University, Seoul 151-742, South Korea |
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Abstract: | The surface reconstruction of epitaxial Ge layer on Si(100) was studied with ultrahigh vacuum scanning tunneling microscopy. The surface with 0.8 ML Ge grown in the presence of a hydrogen surfactant reveals the same structures as found in chemical-vapor-deposited Ge on Si(100): (i) defective (2×1) structure at 290°C, (ii) irregular (2×N) in Ge layer and defective (2×1) in bare Si regions at 420°C, and (iii) (2×N) in Ge-covered regions and c(4×4) in bare Si regions at 570°C. The morphology of step edges does not change with temperature, implying that the c(4×4) reconstruction is anisotropic in nature. |
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Keywords: | Germanium Scanning tunneling microscopy Silicon Surface structure, morphology, roughness, and topography |
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