Thermal stability and radiation hardness of SiC-based schottky-barrier diodes |
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| Authors: | A V Afanas’ev V A Il’in I G Kazarin A A Petrov |
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| Institution: | (1) St. Petersburg State University of Electrical Engineering, St. Petersburg, 197376, Russia |
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| Abstract: | Pt/W/Cr/SiC Schottky-barrier diodes that retain good electrophysical parameters up to 450°C are studied. With the Auger electron spectroscopy (AES) method, it is shown that the thermal stability is provided by using a multilayer metal composition that ensures the metal/SiC interface stability. The surface-barrier structures obtained are tested for radiation hardness. They are irradiated by fast neutrons with a fluence of 4.42×1015 n/cm2 and attendant γ radiation with a dose of 8.67×105 R in the concentration range of N d-N a=1016−5×1017 cm−3. Irreversible modifications of the structures at N d-N a≤8×1016 cm−3 are found. The degradation of the parameters is inversely proportional to the doping level. |
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