Characterization of surface defects formation in strontium titanate(100) |
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Authors: | Akihiko Hirata Atsushi Ando Koichiro Saiki Atsushi Koma |
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Affiliation: | Department of Chemistry, The University of Tokyo, Tokyo 113, Japan |
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Abstract: | The electronic properties of SrTiO3(100) surfaces after various treatments have been studied by electron energy loss spectroscopy and Auger electron spectroscopy. A stoichiometric surface without contamination can be obtained by annealing at 910 K under oxygen atmosphere of 5 × 10−5 Pa. The surface heated under ultrahigh vacuum (UHV) at 910 K exhibits a new surface state in the band gap region, which comes from oxygen vacancies at the top Ti-O2 layer. This state is also produced by electron irradiation or Ar-ion bombardment. |
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