|
|||||
|
|
Model of photoluminescence from ion-synthesized silicon nanocrystal arrays embedded in a silicon dioxide matrix |
|
| Authors: | S N Nagornykh V I Pavlenkov A N Mikhailov A I Belov L V Krasil’nikova D I Kryzhkov D I Tetel’baum |
| Institution: | 1. Research Institute for Physics and Technology, Lobachevsky State University, pr. Gagarina 23, Nizhni Novgorod, 603950, Russia 2. Koz??ma Minin State Pedagogical University (Minin University), ul. Ul??yanova 1, Nizhni Novgorod, 603950, Russia 3. Gaidar State Pedagogical Institute, ul. K. Marksa 36, Arzamas, Nizhni Novgorod oblast, 607220, Russia 4. Institute for Physics of Microstructures, Russian Academy of Sciences, ul. Ul??yanova 46, Nizhni Novgorod, 603950, Russia |
| Abstract: | A four-level model of photoluminescence from Si nanocrystal arrays embedded in a SiO2 matrix is suggested. The model allows for thermally activated transitions between singlet and triplet levels in the exchange-split energy state of an exciton in an excited silicon nanocrystal. An expression is derived for the temperature dependence of the intensity of photoluminescence monochromatic components. A correlation is found between the amount of splitting and the emitted photon energy by comparing model data with our experimental data for ion-synthesized Si nanocrystals in a SiO2 matrix. The model explains the finiteness of the photoluminescence intensity at temperatures close to 0 K and the nonmonotonicity of the temperature run of the intensity. |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ | |