400nm IMPL RADFET剂量计的性能研究

RADFET~多通道探测器将要用来测量北京谱仪BESⅢ中量能器附近的累计剂量. 探测器的技术关键是对400nmIMPL RADFET剂量计具体性能的了解和掌握. 本工作以⁶⁰Co γ源为辐射源, 实验研究了400nm IMPL RADFET剂量计的各项性能, 包括RADFET通道间的一致性、测量累积剂量时的辐照强度相关性以及退火特性等, 同时也讨论了测量数据的拟合方法, 为该类型RADFET剂量计在RADFET多通道探测器的设计、建造和其他方面的应用提供了实验基础.

Study of the Features of 400nm IMPL RADFET Dosimeter

RADFET multi-channel detector will be used to measure the integrated dose near the BESIII crystal calorimeter. In the design of this detector, it is significant to know the detailed features of 400nm IMPL RADFET dosimeter. By using 60Co source, we made experiments and studied the features of this kind of RADFET dosimeter, including the consistency between different channels, the radiation intensity dependence to the integrated dose measurement and the annealing phenomena of RADFET dosimeter. The study results are very useful for the design of RADFET multi-channel detector and the application of RADFET dosimeter in other fields.