Excimer laser-induced crystallization of CdSe thin films |
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| Authors: | Etienne Shaffer Amr S. Helmy Dominique Drouin Jan J. Dubowski |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, Université de Sherbrooke, 2500 boul. de l’Université, Sherbrooke, Québec, J1K 2R1, Canada;(2) The Edward S. Rogers, Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King’s College Road, Toronto, Ontario, M5S 3G4, Canada |
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| Abstract: | We have investigated ArF (λ=193 nm) excimer laser-induced crystallization of amorphous CdSe semiconductor thin films. The crystallization has been monitored by a related photoluminescence emission in the free-exciton and defect-band transition regions. For different irradiation conditions, we have observed formation of nanorods, up to 2 μm long, as well as the formation of arrays of CdSe nanobeads with a narrow size distribution and characteristic dimensions corresponding to λ/2 and λ/8. The successful crystallization has also been confirmed by confocal Raman spectroscopy. |
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| Keywords: | KeywordHeading" >PACS 87.15.nt 52.38.Mf 78.55.-m 78.67.Bf 68.55.-a |
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