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Studies on the vapour growth of ZnS,ZnSe and ZnTe single crystals
Authors:H Hartmann
Institution:Zentralinstitut für Elektronenphysik, Akademie der Wissenschaften der DDR, Mohrenstr, 40/41, 108 Berlin, DDR
Abstract:Large, highly perfect single crystals (up to 10 × 10 × 5 mm3) of ZnS, ZnSe and ZnTe have been grown from the vapour phase by dissociative sublimation and chemical transport with iodine. Good quality crystals were obtained when the growth rate was limited by diffusion of the vapours rather than by thermal convection or by reaction rates at the charge and or the growing surface. The presence of an inert gas and defined iodine concentrations increase the growth stability, especially for charges with slight deviations from stoichiometry. Electronmicrographs, X-ray topographs and etching experiments revealed low dislocation densities and relatively large inclusion-free regions.
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