Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity |
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| Authors: | Shuzhen Yang Ren‐Ci Peng Qing He Yen‐Lin Huang Yijing Huang Jan‐Chi Yang Tianzhe Chen Jingwen Guo Long‐Qing Chen Ying‐Hao Chu Ce‐Wen Nan Pu Yu |
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| Institution: | 1. State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, China;2. State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, China;3. Department of Physics, Durham University, Durham, UK;4. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan;5. Department of Physics, National Cheng Kung University, Tainan, Taiwan;6. Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA;7. Collaborative Innovation Center of Quantum Matter, Beijing, China;8. RIKEN Center for Emergent Matter Science, Wako, Japan |
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| Abstract: | Conducting ferroelectric domain walls attract a wide range of research interest due to their promising applications in nanoelectronics. In this study, we reveal an unexpected enhanced conductivity near the well‐aligned 71° nonpolar domain walls in BiFeO3. Such an interfacial conductivity is induced by the creation of up‐polarized nano‐domains near the 71° domain walls, as revealed by the combination of the piezo‐response force microscopy (PFM) and conducting atomic force microscopy (c‐AFM) imaging techniques, as well as phase‐field simulations. The upward polarized domains are suggested to lower the Schottky barrier at the interface between the tip and sample surface, and then give rise to the enhanced interfacial conductivity. The result provides a new strategy to tune the local conductance in ferroelectric materials and opens up new opportunities to design novel nanoelectronic devices. |
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| Keywords: | domain walls ferroelectric polarization switching local conduction nanodomains |
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