硅中硼离子注入的带电缺陷动力学模拟

为准确描述硼离子注入硅后缺陷/杂质的动力学物理过程,获得硼浓度空间分布及其演化行为,构建一个跨尺度带电缺陷动力学模型,考虑离子注入缺陷的产生及其演化的多种微观过程,包括缺陷电荷态和带电缺陷间的反应、硼—自间隙团簇(BICs)演化以及缺陷与载流子相互作用等物理过程.模拟得到与实验一致的硼浓度深度分布.结果表明:BICs对...

Dynamics Modeling of Charged Defects in Si under B Ion Implantation

To describe accurately the dynamic physical process and obtain quantitatively boron (B) spatial distribution as well as it's evolution behaviors in silicon (Si) under boron implantation, we built a multiscale dynamic model of charged defects. In the model, multiple microscopic processes of defects generation and evolution are comprehensively considered under B ion implantation, including charge states of defects and reactions among charged defects, evolution of B-interstitial clusters (BICs) and interactions between charged defects and carriers. The simulated B distribution is consistent with experiments. It shows that BICs dominate the depth distribution of B concentration and interstitial B (B_I) makes B distribution extend into depth. Besides, considering charge states of defects, we correct diffusion coefficients of Si interstitials (I) and B_I so that the behavior of B distribution can be described accurately. The model reveals real physical processes and micro-mechanisms in Si under B implantation, which demonstrates that BICs and real charge states of defects are the key in describing B distribution. It provides theoretical guidance for semiconductor device fabrication.