Stark shifts of charged particles in semiconductor quantum wells |
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Authors: | A Thilagam |
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Institution: | (1) Faculty of Science, Northern Territory University, Darwin NT 0909, Australia (Fax: +61-89/410460), AU |
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Abstract: | We calculate the effect of a homogeneous electric field on electrons, holes and excitons confined in a quantum well structure
consisting of alternate thin layers of well and barrier material. The electric field which acts perpendicular to the quantum
well is taken as a perturbation on the quantum well structure confining the charges. The electron and hole energies in the
conduction and valence subbands are calculated by solving a one-dimensional Schr?dinger equation. The exciton binding energy
is calculated using an improved excitonic model. Results obtained indicate the importance of higher-order excitons in optical
transitions at high electric fields.
Received: 29 February 1996/Accepted: 19 August 1996 |
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Keywords: | PACS: 73 20 Dx 73 40 Kp |
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