| 在强碳化物形成元素衬底上生长金刚石薄膜的物理机制探索 |
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| 引用本文： | 高巧君,林增栋. 在强碳化物形成元素衬底上生长金刚石薄膜的物理机制探索[J]. 物理学报, 1992, 41(5): 798-803 |
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| 作者姓名： | 高巧君 林增栋 |
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| 作者单位： | (1)北京大学物理系,北京100871; (2)北京粉末冶金研究所,北京100075 |
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| 摘 要： | 作者在研究金刚石表面金属化机理中发现,该物理过程是用化学气相沉积(CVD)方法在强碳化物形成元素上生长金刚石薄膜的逆物理过程。推断在强碳化物形成元素上,诸如WSi,Ta等,生长金刚石薄膜,其界面有相应的碳化物,诸如WC,SiC,TaC等出现,继而生长的金刚石薄膜实质是在相应的碳化物背底上择优取向成核生长的。从而揭示在强碳化物形成元素上生长金刚石薄膜的物理机制是:W(Si,Ta)等→WC(SiC,TaC)等→金刚石薄膜。关键词：
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| 关 键 词： | 金刚石 薄膜 生长 碳化物 形成元素 |
| 收稿时间： | 1991-01-25 |
PHYSICAL MECHANISM OF SYNTHESIZED DIAMOND FILMS ON THE SUBSTRATE OF A STRONG CARBIDE FORMING ELEMENT |
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| GAO QIAO-JUN and LIN ZENG-DONG. PHYSICAL MECHANISM OF SYNTHESIZED DIAMOND FILMS ON THE SUBSTRATE OF A STRONG CARBIDE FORMING ELEMENT[J]. Acta Physica Sinica, 1992, 41(5): 798-803 |
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| Authors: | GAO QIAO-JUN and LIN ZENG-DONG |
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| Abstract: | It has been discovered that the physical process of diamond surface metallization is the converse physical process of synthesized diamond film produced by plasma CVD when the substrate is strong carbide forming element and synthesitic temperatures range from 700℃ to 1000℃. We predicted that the physical process of synthesized diamond film should have a structure such as W-WC-diamond film or Si-SiC-diamond film, etc. under this condition. |
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