Quantitative depth profiling by laser-ionization sputtered neutral mass spectrometry |
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Institution: | 1. Department of Chemistry, Indiana University, 800 E. Kirkwood Avenue, Bloomington, IN 47405, USA;2. Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, CA 94720, USA |
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Abstract: | Depth profiling by laser-ionization sputtered neutral mass spectrometry (SNMS) is reviewed. The matrix effects, including surface and interface effects, in laser-ionization SNMS and secondary ion mass spectrometry (SIMS) are compared with each other and discussed. Laser-ionization SNMS can provide depth profiles with much smaller matrix effects than conventional SIMS. Depth resolution can effectively be improved by using grazing incidence for the primary ion beam with little interfacial effect. The quantification method in laser-ionization SNMS is also mentioned. |
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