Low-voltage antimony-doped SnO₂ nanowire transparent transistors gated by microporous SiO₂-based proton conductors

A battery drivable low-voltage transparent lightly antimony(Sb)-doped SnO 2 nanowire electric-double-layer(EDL) field-effect transistor(FET) is fabricated on an ITO glass substrate at room temperature.An ultralow operation voltage of 1 V is obtained on account of an untralarge specific gate capacitance(～2.14 μF/cm 2) directly bound up with mobile ions-induced EDL(sandwiched between the top and bottom electrodes) effect.The transparent FET shows excellent electric characteristics with a field-effect mobility of 54.43 cm 2 /V · s,current on/off ration of 2 × 10 4,and subthreshold gate voltage swing(S = dV gs /d(log I ds)) of 140 mV/decade.The threshold voltage V th(0.1 V) is estimated which indicates that the SnO 2 namowire transistor operates in an n-type enhanced mode.Such a low-voltage transparent nanowire transistor gated by a microporous SiO 2-based solid electrolyte is very promising for battery-powered portable nanoscale sensors.